Experimental investigation of high frequency class-E power amplifier with parallel and series shunt fil ters.

Автор(и)

  • D. G. Makarov
  • V. G. Krizhanovski
  • Yu. V. Rassokhina

Анотація

High frequency high efficiency power amplifiers remain one of the main competitive goals in designing of radio transmitter for wireless information technology, «Internet-of-Things» (IoT) devices, distributed network systems, especially for portable devices because power amplifier is the main power consumption component of the whole radio transmitting system.

Посилання

Krizhanovski V. G. High-efficiency transistor power amplifiers. Donetsk, Apex, 2004. 448 p. (in Russian).

Grebennikov A. “High-efficiency class E/F lumped and transmission-line power amplifiers,” IEEE Tran. on Microwave Theory and Techniques, Vol. 59, No. 6, June 2011, pp. 1579–1588.

Mediano A., Sokal N. O. “A Class-E RF power amplifier with a flat-top transistor-voltage waveform,” IEEE Trans. on Power Electronics, Vol. 28, No. 11, Nov. 2013, pp. 5215–5221.

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Номер

Матеріали наукової конференції (2017-2018 рр.). Том 2.

Розділ

Секція «Фізика»